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| NTQD6968N Power MOSFET 7.0 A, 20 V, Common Drain, Dual N-Channel, TSSOP-8 Features * * * * * * Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive 3 mm Wide TSSOP-8 Surface Mount Package High Speed, Soft Recovery Diode TSSOP-8 Mounting Information Provided http://onsemi.com V(BR)DSS 20 V RDS(on) TYP 17 mW @ 4.5 V ID MAX 7.0 A N-Channel D Applications N-Channel D * Battery Protection Circuits MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA 25C (Note 1) Drain Current - Continuous @ TA 70C (Note 1) Drain Current - Pulsed (Note 3) Total Power Dissipation @ TA 25C (Note 1) Drain Current - Continuous @ TA 25C (Note 2) Drain Current - Continuous @ TA 70C (Note 2) Drain Current - Pulsed (Note 3) Total Power Dissipation @ TA 25C (Note 2) Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes for 10 seconds Symbol VDSS VGS ID ID IDM PD ID ID IDM PD TJ, Tstg RqJA Value 20 "12 7.0 5.6 20 1.81 6.2 4.9 18 1.39 -55 to +150 69 90 260 C Unit Vdc Vdc Adc 8 W Adc G1 G2 S1 TSSOP-8 CASE 948S PLASTIC 1 S2 MARKING DIAGRAM & PIN ASSIGNMENT W C C/W D S1 S1 G1 1 2 3 4 E68 YWW N Top View E68 Y WW N = Device Code = Year = Work Week = MOSFET 8 7 6 5 D S2 S2 G2 TL 1. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz. Cu 0.06 thick single sided), t 10 sec. 2. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz. Cu 0.06 thick single sided), Steady State. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. ORDERING INFORMATION Device NTQD6968NR2 Package TSSOP-8 Shipping 4000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2003 1 December, 2003 - Rev. 1 Publication Order Number: NTQD6968N/D NTQD6968N ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 25C) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 12 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) Static Drain-to-Source On-State Resistance (VGS = 4.5 Vdc, ID = 7.0 Adc) (VGS = 2.5 Vdc, ID = 7.0 Adc) (VGS = 2.5 Vdc, ID = 3.5 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 7.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 4 and 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 16 Vdc, Vdc VGS = 4.5 Vdc, ID = 7.0 Adc) 70 (VDD = 16 Vdc, ID = 7.0 Adc, VGS = 4.5 Vdc, RG = 6.0 W) td(on) tr td(off) tf Qtot Qgs Qgd - - - - - - - 8.0 25 60 65 12.5 1.0 5.0 - - - - 17 - - nC ns (VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss - - - 630 260 95 - - - pF VGS(th) 0.6 - RDS(on) - - - gFS - 0.017 0.022 0.022 19.2 0.022 0.030 0.030 - Mhos 0.75 3.0 1.2 - Vdc mV/C W V(BR)DSS 20 - IDSS - - IGSS - - - - 1.0 10 100 nAdc - 16 - - Vdc mV/C mAdc Symbol Min Typ Max Unit BODY-DRAIN DIODE RATINGS (Note 4) Forward On-Voltage Reverse Recovery Time (IS = 7.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature. (IS = 7.0 Adc, VGS = 0 Vdc) VSD trr ta tb QRR - - - - - 0.82 35 15 20 0.02 1.2 - - - - mC Vdc ns http://onsemi.com 2 NTQD6968N 14 VGS = 10, 5, 3 and 2.2 V resp. ID, DRAIN CURRENT (AMPS) 12 10 8 6 4 2 0 0 1 1.2 1.4 1.6 1.8 0.2 0.4 0.6 0.8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 1.2 V 1.4 V 1.8 V TJ = 25C 1.6 V ID, DRAIN CURRENT (AMPS) 12 10 8 6 TJ = 125C 4 2 0 0 TJ = 25C TJ = -55C 1.5 2 1 0.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.5 14 VDS 10 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE () Figure 2. Transfer Characteristics 0.03 ID = 7.0 A TJ = 25C 0.02 0.04 TJ = 25C 0.035 0.03 0.025 VGS = 2.5 V 0.02 0.015 0.01 0.01 VGS = 4.5 V 2 4 6 8 10 12 14 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2 ID = 3.5 A VGS = 4.5 V IDSS, LEAKAGE (nA) 1.5 10000 100000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V 1 TJ = 150C 1000 TJ = 125C 0.5 0 -50 100 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTQD6968N VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3000 2500 C, CAPACITANCE (pF) 2000 1500 1000 500 Crss VDS = 0 V Ciss VGS = 0 V TJ = 25C 5 QT 4 VGS 3 2 Q1 Q2 Ciss Crss 0 10 5 VGS 0 VDS 5 10 15 Coss 20 1 ID = 7.0 A TJ = 25C 0 0 2.5 5 7.5 10 12.5 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDD = 16 V ID = 7.0 A VGS = 4.5 V t, TIME (ns) 100 tf td(off) tr 10 td(on) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0.5 Figure 8. Gate-to-Source Voltage versus Total Charge VGS = 0 V TJ = 25C 1 1 10 RG, GATE RESISTANCE () 100 0.525 0.55 0.575 0.6 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 ID, DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE 10 TC = 25C 100 s 1 ms 10 ms 1 Figure 10. Diode Forward Voltage versus Current di/dt IS trr ta tb TIME tp IS 0.25 IS 0.1 dc RDS(on) Limit Thermal Limit Package Limit 1 10 100 0.01 0.1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Diode Reverse Recovery Waveform http://onsemi.com 4 NTQD6968N 10 R(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 Single Pulse 0.0001 0.000001 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 1 10 100 Figure 13. Thermal Response http://onsemi.com 5 NTQD6968N PACKAGE DIMENSIONS TSSOP-8 CASE 948S-01 PLASTIC ISSUE O 8x K REF 0.10 (0.004) M 0.20 (0.008) T U S TU S V S 2X L/2 8 5 L 1 PIN 1 IDENT 4 B -U- J J1 K1 K 0.20 (0.008) T U S A -V- C SECTION N-N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. MILLIMETERS MIN MAX 2.90 3.10 4.30 4.50 --- 1.10 0.05 0.15 0.50 0.70 0.65 BSC 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ --- 2.20 --- 3.20 INCHES MIN MAX 0.114 0.122 0.169 0.177 --- 0.043 0.002 0.006 0.020 0.028 0.026 BSC 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ --- 0.087 --- 0.126 0.076 (0.003) D -T- SEATING PLANE G DETAIL E P N P1 N DETAIL E SOLDERING FOOTPRINT* 0.038 0.95 0.252 6.4 0.018 0.45 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 EEEE CCC ECCC EEE EEEE -W- 0.25 (0.010) M F 0.177 4.5 0.026 0.65 inches mm DIM A B C D F G J J1 K K1 L M P P1 NTQD6968N Notes http://onsemi.com 7 NTQD6968N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTQD6968N/D |
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